孙海定博士现任中国科大微电子学院特任教授，博士生导师，iGaN Laboratory实验室负责人。先后入选国家优青，省杰青，中科院海外高层次人才计划。本科和硕士毕业于华中科技大学，师从刘胜院士。博士毕业于美国波士顿大学，师从氮化物半导体分子束外延奠基人Theodore D. Moustakas教授。长期致力于宽禁带III族氮化物（GaN等）和III族氧化物（Ga2O3等）化合物半导体材料MOCVD和MBE外延、光电器件（LED, laser, photodetector等）和电力电子功率器件（高电子迁移率晶体管HEMTs）设计与制备研究。同时开展包括低维材料与器件（纳米线，量子点），二维/三维新型半导体异质结的材料生长、载流子输运特性、光电集成器件与系统研究。

近年来，共发表SCI论文130余篇，ESI高被引论文8篇，Google引用4000+，包括Nature Electronics, Nature Photonics, Nature Catalysis, Advanced Materials, Light: Science and Application, Laser & Photonics Reviews, Reports on Progress in Physics, Advanced Functional Materials, ACS Nano, Nano Letters, Small, Advanced Optical Materials, Nanoscale, IEEE Electron Device Letters, Applied Physics Letters, Optics Letters and Optics Express等国际重要SCI论文和IEDM等国际电子器件顶会论文。获国内外专利授权20余项，部分技术与工业界合作已经产业化。在国际会议上做口头报告100多次（28次特邀报告），受邀撰写4本专著章节，包括ELSEVIER出版社《Ultrawide Bandgap Semiconductors》书中题为“https://www.researchgate.net/profile/Haiding-Sun 

光电材料与器件代表性论文：

Quantum Dots Integrated Deep-ultraviolet Micro-LED Array Towards Solar-Blind and Visible Light Dual-Band Optical Communication, IEEE Electron Device Letters, 44(3), 472-475 (2023)

10. D. Wang, Haiding Sun*et al., Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires, Light: Science & Applications, 11(1), 1-13(2022) (Cover Article封面文章 并入选 Editors’ Highlight)

11. H. Yu, Haiding Sun*et al., Deep Ultraviolet LEDs Incorporated with SiO2‐Based Microcavities Toward High Speed Ultraviolet Light Communication, Advanced Optical Materials 10 (23), 2201738(2022)

12. S. Fang, Haiding Sun* et al, Balancing the Photo-Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual-Polarity Photodetection，Advanced Functional Materials, 31(29), 2202524 (2022)

13. X. Liu, Haiding Sun* et al, Achieving Record High External Quantum Efficiency> 86.7% in Solar‐Blind Photoelectrochemical Photodetection，Advanced Functional Materials, 2201604 (2022) (Cover Article封面文章)

14. D. Wang, Haiding Sun* et al, AlGaN/Pt Nanoarchitecture: Toward High Responsivity, Self Powered Ultraviolet-Sensitive Photodetection Nano Letters, 21(1), 120–129 (2021) (ESI高被引论文)

15. D. Wang, Ran Long, Yujie Xiong, Boon S. Ooi, Zetian Mi, Jr-Hau He, and Haiding Sun*, AlGaN/Pt Nanoarchitecture: Toward High Responsivity, Self Powered Ultraviolet-Sensitive Photodetection Nano Letters, 21(1), 120–129 (2021).  (ESI高被引论文)

16. Yu, H, Haiding Sun* et al, AlGaN-based deep ultraviolet micro-LED emitting at 275 nm. Optics Letters 46(13), 3271-3274 (2021) (2020-2021年度OL期刊高被引论文)

17. C. Huang, Haiding Sun*, Ultraviolet Optoelectronic Devices Based on AlGaN-SiC Platform: Towards Monolithic Photonics Integration System, Nano Energy, 77, 105149 (2020)

18. Y. Qin, Haiding Sun*, Shibing Long*, and Ming Liu, Metal−Semiconductor−Metal ε‑Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism, ACS Photonics 7(3), 812−820, 2020 (Cover Article杂志封面文章，ESI高被引论文前1%)

19. Haiding. Sun* et al., “Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate”, Advanced Functional Materials, 29 (48), 1905445, 2019 # 媒体报道：Featured in Compound Semiconductor，中国科技日报，中国科学报(2020年第7423期头版

20. Haiding Sun* et al, Graded-Index Separated Confinement Heterostructure AlGaN Nanowires: Towards Ultraviolet Laser Diodes Implementation, ACS Photonics, Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer, Journal of Physics D: Applied Physics 56 (2), 025105(2022)

31. B. Zeng, Haiding Sun* et al, DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures, Journal of Physics D: Applied Physics 55 (43), 434003(2022)

32. K. Song, Haiding Sun* et al, Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping Journal of Physics D: Applied Physics 53 (34), 345107 (2020)